LAM 4520 Oxide ETCH Chamber PM Technique

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Vacuum Chamber PM Technique
LAM 4520 Oxide ETCH Chamber

OBJECTIVE:
TO EFFECTIVELY PM THE LAM 4520 OXIDE ETCH CHAMBER IN A TIMELY MANNER, WHILE IMPROVING TOOL RECOVERY AND PARTICLE PERFORMANCE

	Vacuum Chamber:	LAM 4520 OXIDE ETCHER
	Vacuum Chamber Process Residue:	PROCESS INDUCED RESIDUE
	Vacuum Chamber Components:	CHAMBER, WAFER CHUCK PARTS


	Old Procedure:	Scotch-Brite™, IPA, and wipers Tool recovery: Clean time 1 hour

	New Procedure:	<1 hour using 800 Grit Diamond ScrubPAD, DI water & IPA Tool recovery: ????


	Vacuum Chamber Products:
		(1) HT4580D 800 Grit Diamond ScrubPAD (5) HT4669 UltraSORB^® Wipers (1) HT4754 UltraSOLV^® Sponge (1) FTPEN-1 ScrubWRIGHT™ Pen (1) HT4580DW-5 800 Grit Diamond ScrubBelt^® (2) HT5790S-5 MiraWIPES^®

LAM 4520 Oxide Etch Chamber PM Procedure:

View “How to” instructional videos on http://foamtecintlwcc.com/video/

Step 1:

Using proper procedures and safety guidelines, shutdown and prepare LAM 4520 chamber for wet clean

Step 2:

Wafer chuck is covered with standard clean room wipers (See Fig 1)



			Fig 1: Protect the wafer chuck with clean room wipers

Step 3:

Chamber is then wiped down using the UltraSORB^® foam wipers and IPA. The foam wipers allow operator to wipe all areas of the process chamber without snagging or tearing the wiper

Step 4:

Take lightly dampened 800D Grit Diamond ScrubPAD and proceed to scrub off deposition from OXIDE ETCH chamber bottom and walls (See Fig 2)

NOTE:

Important to keep area a little moist with IPA



	Fig 2: Use 800 Grit Diamond ScrubPAD to clean chamber walls and bottom. It may help to fold the ScrubPAD in half

Step 5:

As Diamond ScrubPAD appears to load up with deposition, pull ScrubPAD across damp HT4754 UltraSOLV^® Sponge. This will help keep ScrubPAD effectively removing oxide deposition from chamber (See Fig 3, 4 & 5)

Fig 3: ScrubPAD loaded with deposition

Fig 4: Pull ScrubPAD across UltraSOLV^® Sponge

Fig 5: Unloaded ScrubPAD

Step 6:

Continue to rinse UltraSOLV^® Sponge as necessary to keep UltraSOLV^® Sponge slightly moist and free of deposition (See Fig 6 & 7)


	Fig 6: Loaded UltraSOLV^® Sponge		Fig 7: UltraSOLV^® Sponge AFTER rinse


NOTE:	THE POLYMER ON THE LAM POLY ETCH CHAMBER SHOULD NOT BE VERY THICK. SCRUBBING TECHNIQUE SHOULD BE WITH GENTLE PRESSURE AND FOR A SHORT PERIOD OF TIME

Step 7:	Continue to repeat this SCRUB – WIPE – RINSE procedure outlined in steps 4 through 6 for the remainder of the LAM 4520 Oxide ETCH Chamber

NOTE:	ENSURE NOT TO PUT EXCESSIVE DI WATER ON CHAMBER BODY, JUST ENOUGH TO KEEP SCRUBBED AREA MOIST

Step 8:	Use UltraSOLV^® sponge to wipe the chamber clean during the scrub

Step 9:	After all scrubbing is complete, use the ScrubWRIGHT™ Pen with ScrubBelt^® to clean the edges of the wafer chuck and the lip around the outside of the chamber (See Fig 8)



FINAL WIPE PROCEDURE:


IMPORTANT NOTE

MUST FOLLOW ENTIRE FOAMTEC INTERNATIONAL FINAL WIPE PROCEDURE WITH HT5790S MiraWIPES^® IN ORDER TO HELP WITH AN EFFECTIVE TOOL RECOVERY. THE MICRO-FIBER CHARACTERISTICS OF THIS PRODUCT HELPS REMOVE MORE DEPOSITION FROM THE PARTS THAN ANY OTHER STANDARD FAB WIPER


Figure below shows how much more deposition the Foamtec International MiraWIPE^® can remove from a critical surface compared to the standard fab wiper, making the MiraWIPE^® FINAL WIPE PROCEDURE the most CRITICAL STEP of the PM procedure (See Fig 9a & 9b)


Fig 12a: Current fab wiper after completely wiping chamber		Fig 12b: Particles picked up using HT5790S MiraWIPES^® after completely wiping with current fab wiper


	MiraWIPES^® are the KEY STEP for DEFECT REDUCTION and IMPROVED TOOL RECOVERY


Step 10:	Use the MiraWIPE^® wipers to perform the final wipe of the chamber before installing new shields

Step 11:	Follow proper tool recovery guidelines as outlined by LAM Research Corporation

Scotch-Brite™ is a trademark of 3M Corporation